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| Ordering number : ENN7548 FW250 N-Channl Silicon MOSFET FW250 Ultrahigh-Speed Switching Applications Features * * * Package Dimensions unit : mm 2129 [FW250] 8 5 0.3 4.4 6.0 Low ON-resistance. Ultrahigh-speed switcing. 4V drive. 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW100ms) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg duty cycle1% duty cycle1% 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings 60 20 3 3.5 5.5 20 1.8 2.2 150 --55 to +150 Unit V V A A A A W W C C PW10s, duty cycle1% Mounted on a ceramic board(2000mm2!0.8mm)1unit, PW10s Mounted on a ceramic board(2000mm2!0.8mm), PW10s Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=10V ID=1.5A, VGS=4V Ratings min 60 1 10 1.2 2.8 4 110 150 145 215 2.6 typ max Unit V A A V S m m Marking : W250 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91603 TS IM TA-100553 No.7548-1/4 FW250 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A VDS=30V, VGS=10V, ID=3A IS=3A, VGS=0 Ratings min typ 300 54 34 8 23 30 40 7.8 2.4 1.7 0.86 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 10V 0V VIN ID=3A RL=10 VDD=30V D PW=10s D.C.1% VOUT G FW250 P.G 50 S 3.0 ID -- VDS .0V 10 V 8.0 V 6 ID -- VGS Ta= --25 1.0 1.5 2.0 2.5 Drain Current, ID -- A 2.0 Drain Current, ID -- A 5 V .0V 6.0 VG 4 1.5 4.0 3 1.0 2 0.5 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT06041 0 0 0.5 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 300 280 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 300 25 C Ta= 75 C --25 C IT06042 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 --60 Static Drain-to-Source On-State Resistance, RDS(on) -- m 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 ID=1.5A 3A 1. I D= VG 5A, 4V S= I D= , VG 3.0A 10 S= V --40 --20 0 20 40 60 80 100 120 25 C 140 IT06044 =3 S .5 V 5 Gate-to-Source Voltage, VGS -- V IT06043 Ambient Temperature, Ta -- C No.7548-2/4 75 VDS=10V C C FW250 10 yfs -- ID VDS=10V C 25 Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 IF -- VSD VGS=0 = Ta Forward Drain Current, IF -- A 5 --2 C 3 2 1.0 7 5 3 2 0.1 7 5 3 2 1.0 7 5 3 2 0.1 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 100 7 5 7 10 IT06045 1000 0 0.2 0.4 Ta=7 5 C 25C --25C 0.6 0.8 7 5C 1.0 1.2 IT06046 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=30V VGS=10V td(off) tf 7 5 Ciss, Coss, Crss -- pF 3 2 Ciss 10 7 5 3 2 td(on) tr 100 7 5 3 2 Coss Crss 1.0 0.1 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 9 10 IT06047 5 7 0 10 20 30 40 50 60 IT06048 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=3A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IDP=20A 8 Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 ID=3A 1m 10s 10 0 s s 10 10 10 Operation in this area is limited by RDS(on). ms 0m s s op era DC tio n 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board(2000mm2!0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.5 IT06049 PD -- Ta Mounted on a ceramic board(2000mm2!0.8mm), PW10s Drain-to-Source Voltage, VDS -- V 5 7 100 IT06050 Allowable Power Dissipation, PD -- W 2.2 2.0 1.8 1.5 To t di ss 1 u ipa nit tio al n 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT06051 No.7548-3/4 FW250 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. PS No.7548-4/4 |
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